Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide-Reference-Cited by-同舟云学术

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Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

Published:2013-02 Issue:2 Volume:34 Page:244-246
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lee Jung-Kyu,Jung Sunghun,Choe Byeong-In,Park Jinwon,Chung Sung-Woong,Roh Jae Sung,Hong Sung-Joo,Park Chan Hyeong,Park Byung-Gook,Lee Jong-Ho

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6417986/06410338.pdf?arnumber=6410338

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Noise-assisted transport mechanism analysis and synaptic characteristics in ZrOX/HfAlOX-based memristor for neuromorphic systems;APL Materials;2023-11-01

2. Charge transport and low-frequency conductance noise in metal-nanoparticle embedded one-dimensional conducting polymer nanotubes: multiple resistive switching phenomena;Materials Today Nano;2023-06

3. Transient Noise Simulation Method for Memristor Circuits with Applications;2023 International Symposium of Electronics Design Automation (ISEDA);2023-05-08

4. Resistive Switching in a MoSe2-Based Memory Device Investigated Using Conductance Noise Spectroscopy;ACS Applied Electronic Materials;2021-06-17

5. Rate limited filament formation in Al-ZnO-Al bipolar ReRAM cells and its impact on early current window closure during cycling;Journal of Applied Physics;2019-03-14

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