Rate limited filament formation in Al-ZnO-Al bipolar ReRAM cells and its impact on early current window closure during cycling
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, Indian Institute of Technology (IIT) Roorkee, Roorkee 247 667, Uttarakhand, India
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5087270
Reference28 articles.
1. Probing the Mechanism for Bipolar Resistive Switching in Annealed Graphene Oxide Thin Films
2. Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system
3. Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms
4. Influence of metal electrode on the performance of ZnO based resistance switching memories
5. Compact Ga-Doped ZnO Nanorod Thin Film for Making High-Performance Transparent Resistive Switching Memory
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2. Pulsed Low-Frequency Noise Characterization on Al/ZnO/Al ReRAM to Investigate the Role of Deep-Level Oxygen Vacancy State in HRS Leakage;IEEE Transactions on Electron Devices;2023-11
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4. Endurance degradation of solution-processed ZnO polycrystalline film-based resistive switching memory;SCIENTIA SINICA Physica, Mechanica & Astronomica;2020-03-11
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