Resistive Switching in a MoSe2-Based Memory Device Investigated Using Conductance Noise Spectroscopy-Reference-Cited by-同舟云学术

Resistive Switching in a MoSe2-Based Memory Device Investigated Using Conductance Noise Spectroscopy

Published:2021-06-17 Issue:7 Volume:3 Page:3096-3105
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Das Biswajit¹,Bera Arnab¹,Samanta Madhupriya²,Bera Satyabrata¹,Kalimuddin Sk¹,Kundu Mohan³,Gayen Sirshendu¹,Chattopadhyay Kalyan Kumar⁴^ORCID,Mondal Mintu¹^ORCID

Affiliation:

1. School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India

2. Department of Electronics and Telecommunication Engineering, Jadavpur University, Jadavpur, Kolkata 700032, India

3. Department of Physics, Acharya Prafulla Chandra College, New Barrackpore, Kolkata 700131, India

4. Department of Physics, Jadavpur University, Jadavpur, Kolkata 700032, India

Funder

Council of Scientific and Industrial Research, India

University Grants Commission

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00329

Reference68 articles.

1. Metal–Oxide RRAM

2. Emerging memories: resistive switching mechanisms and current status

3. Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2

4. Correlative analysis of conducting filament distribution at interfaces and bias-dependent noise sources in TiN/TiOx/Pt and Pt/TiOx/TiOy/Pt bipolar resistive switching frames

5. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

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