Evidence for Silicon Bandgap Narrowing in Uniaxially Strained MOSFETs Subjected to Tensile and Compressive Stress-Reference-Cited by-同舟云学术

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Evidence for Silicon Bandgap Narrowing in Uniaxially Strained MOSFETs Subjected to Tensile and Compressive Stress

Published:2012-06 Issue:6 Volume:33 Page:770-772
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kang Ting-Kuo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6203434/06194262.pdf?arnumber=6194262

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