Material and integration challenges for large scale Si quantum computing-Reference-Cited by-同舟云学术

Material and integration challenges for large scale Si quantum computing

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Vinet M.¹,Bedecarrats T.¹,Paz B. Cardoso²,Martinez B.³,Chanrion E.²,Catapano E.¹,Contamin L.¹,Pallegoix L.¹,Venitucci B.³,Mazzocchi V.¹,Niebojewski H.¹,Bertrand B.¹,Rambal N.¹,Thomas C.¹,Charbonnier J.¹,Mortemousque P.-A.¹,Hartmann J.-M.¹,Nowak E.¹,Thonnart Y.¹,Billiot G.¹,Casse M.¹,Urdampilleta M.²,Niquet Y.-M.³,Perruchot F.¹,De Franceschi S.³,Meunier T.²

Affiliation:

1. CEA Leti

2. CNRS Néel Institute

3. CEA-IRIG, Université Grenoble Alpes,Grenoble,France

Funder

European Research Council

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720708.pdf?arnumber=9720708

Reference17 articles.

1. Formation of strain-induced quantum dots in gated semiconductor nanostructures

2. Experimental Study of Gate-First FinFET Threshold-Voltage Mismatch

3. Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology

4. Challenges and perspectives in the modeling of spin qubits

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transport characterization of CMOS-based devices fabricated with isotopically-enriched ²⁸Si for spin qubit applications;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

2. RF simulation platform of qubit control using FDSOI technology for quantum computing;Solid-State Electronics;2023-01

3. Spin Qubits in Silicon FinFET Devices;2022 International Electron Devices Meeting (IEDM);2022-12-03