Understanding and modelling the PBTI reliability of thin-film IGZO transistors-Reference-Cited by-同舟云学术

Understanding and modelling the PBTI reliability of thin-film IGZO transistors

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Chasin A.,Franco J.,Triantopoulos K.¹,Dekkers H.¹,Rassoul N.¹,Belmonte A.¹,Smets Q.¹,Subhechha S.¹,Claes D.¹,van Setten M. J.¹,Mitard J.¹,Delhougne R.¹,Afanas'ev V.²,Kaczer B.¹,Kar G. S.¹

Affiliation:

1. imec,Leuven,Belgium

2. KULeuven,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720666.pdf?arnumber=9720666

Reference18 articles.

1. Defects in Amorphous Semiconductors: The Case of Amorphous Indium Gallium Zinc Oxide

2. Comparative Studies of Long-Term Ambiance and Electrical Stress Stability of IGZO Thin-Film Transistors Annealed Under Hydrogen and Nitrogen Ambiance

3. Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability

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