Optimum Design of Channel Material and Surface Orientation for Extremely-Thin-Body nMOSFETs under New Modeling of Surface Roughness Scattering
Author:
Affiliation:
1. the University of Tokyo,Department of Electrical Engineering and Information Systems,Tokyo,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720715.pdf?arnumber=9720715
Reference17 articles.
1. A review of bivariate gamma distributions for hydrological application
2. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
3. A Novel Characterization Scheme of $\hbox{Si/SiO}_{2}$ Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs
4. Effect of Sample Thickness on SiO2/Si Interface Roughness Characterization through Transmission Electron Microscope Measurements in Strained-Si MOSFETs
5. Surface roughness at the Si(100)-SiO2interface
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1. Electron Mobility Enhancement of (111)-Oriented Extremely Thin Body Ge-on-Insulator nMOSFETs by Flipped Smart-Cut Substrates;IEEE Transactions on Electron Devices;2024-09
2. Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects;IEEE Transactions on Electron Devices;2024-04
3. Interpretation of mobility universality against effective electric field of Si nMOSFETs based on nonlinear model of surface roughness scattering;Applied Physics Express;2023-06-01
4. Formulation of Ground States for 2DEG at Rough Surfaces and Application to Nonlinear Model of Surface Roughness Scattering in nMOSFETs;IEEE Journal of the Electron Devices Society;2023
5. Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors;IEEE Transactions on Electron Devices;2022-09
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