Deep Learning-Assisted Trap Extraction Method from Noise Power Spectral Density for MOSFETs
Author:
Affiliation:
1. School of Integrated Circuits, Peking University,Beijing,China,100871
Funder
National Key Research and Development
Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529340.pdf?arnumber=10529340
Reference15 articles.
1. Low frequency noise variability in high-k/metal gate stack 28nm bulk and FD-SOI CMOS transistors
2. Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
3. A New Physical Method Based on $CV$ –$GV$ Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-$k$ /III-V MOSFETs
4. Extraction of the Defect Distributions in DRAM Capacitor Using $I$ – $V$ and $C$ – $V$ Sensitivity Maps
5. GCN-RL Circuit Designer: Transferable Transistor Sizing with Graph Neural Networks and Reinforcement Learning
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