Investigation of Retention Characteristics in a Triple-level Charge Trap 3D NAND Flash Memory
Author:
Affiliation:
1. Yangtze Memory Technologies Co., Ltd.,Wuhan,China,430205
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764506.pdf?arnumber=9764506
Reference11 articles.
1. Investigation on multiple activation energy of retention in charge trapping memory using self-consistent simulation
2. Modeling of Charge Loss Mechanisms during the Short Term Retention Operation in 3-D NAND Flash Memories
3. Development and Optimization of Re-Oxidized Tunnel Oxide with Nitrogen Incorporation for the Flash Memory Applications
4. Accurate Lifetime Estimation of Sub-20-nm NAND Flash Memory
5. A Novel Confined Nitride-Trapping Layer Device for 3-D NAND Flash With Robust Retention Performances
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1. Damage and optimization of program/erase operation in MANOS 3D NAND flash memory;Microelectronic Engineering;2023-06
2. Distributed Cycling in Charge Trap-Based 3D NAND Arrays: Model and Qualification Tests Implications;2023 IEEE International Memory Workshop (IMW);2023-05
3. Impact of Trapped Charge Vertical Loss and Lateral Migration on Lifetime Estimation of 3-D NAND Flash Memories;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
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