Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs
Author:
Affiliation:
1. Technische Universität Wien,Institute for Microelectronics,Wien,Austria,1040
2. Infineon Technologies AG,Neubiberg,Germany,85579
3. Infineon Technologies Austria AG,Villach,Austria,9500
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764584.pdf?arnumber=9764584
Reference23 articles.
1. Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies
2. On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs
3. Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs
4. Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation
5. Light emission from 4H SiC MOSFETs with and without NO passivation
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