Light emission from 4H SiC MOSFETs with and without NO passivation-Reference-Cited by-同舟云学术

Light emission from 4H SiC MOSFETs with and without NO passivation

Published:2001-11 Issue:1-4 Volume:59 Page:393-398
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Stahlbush R.E,Macfarlane P.J,Williams J.R,Chung G.Y,Feldman L.C,McDonald K

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Anomalously High Density of Interface States Near the Conduction Band in SiO₂/4H-SiC MOS Devices

2. J.R. Williams, G.Y. Chung, C.C. Tin, K. McDonald, D. Farmer, R.K. Chanana, R.A. Weller, S.T. Pantelides, O.W. Holland, M.K. Das, L.A. Lipkin, L.C. Feldman, in: A.K. Agarwal, J.A. Cooper, Jr., E. Jansen, M. Skowronski (Eds.), Mat. Res. Soc. Symp. Proc. 640 (2001), p. H3.5.1.

3. Light emission from interface traps and bulk defects in SiC MOSFETs

4. P.J. Macfarlane, R.E. Stahlbush, in: A.K. Agarwal, J.A. Cooper, Jr., E. Jansen, M. Skowronski (Eds.), Mat. Res. Soc. Symp. Proc. 640 (2001) p. H4.9.1.

5. Deep level centers in silicon carbide: A review

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs;Physical Review Applied;2024-08-30

2. Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps;Journal of Applied Physics;2023-07-19

3. Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors;Communications Engineering;2023-01-31

4. Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03