Recent Developments in Understanding the Gate Switching Instability in Silicon Carbide MOSFETs-Reference-Cited by-同舟云学术

Recent Developments in Understanding the Gate Switching Instability in Silicon Carbide MOSFETs

Published:2023-10-08 Issue: Volume: Page:1-9
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Container-title:2023 IEEE International Integrated Reliability Workshop (IIRW)
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Author:

Feil Maximilian W.¹,Waschneck Katja¹,Reisinger Hans¹,Berens Judith²,Aichinger Thomas²,Prigann Sven¹,Pobegen Gregor³,Salmen Paul¹,Rescher Gerald²,Gustin Wolfgang¹,Grasser Tibor⁴

Affiliation:

1. Infineon Technologies AG,Neubiberg,Germany,85579

2. Infineon Technologies Austria AG,Villach,Austria,9500

3. KAI GmbH,Villach,Austria,9524

4. Technische Universitat Wien,Institute for Microelectronics,Wien,Austria,1040

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10477668/10477631/10477632.pdf?arnumber=10477632

Reference41 articles.

1. Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

2. High-Density Power Conversion and Wide-Bandgap Semiconductor Power Electronics Switching Devices

3. Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

4. Review of Silicon Carbide Power Devices and Their Applications

5. Comparison of SiC and Si power semiconductor devices to be used in 2.5 kW DC/DC converter

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1. Gate Switching Instability in Silicon Carbide MOSFETs—Part I: Experimental;IEEE Transactions on Electron Devices;2024-07

2. A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures;Micromachines;2024-06-09