Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors
Author:
Affiliation:
1. Fuji Electric Co., Ltd.,Advanced Materials Research Dept.,Tokyo,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764433.pdf?arnumber=9764433
Reference11 articles.
1. SiC MOSFET threshold-stability issues
2. Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress
3. A new electron-trapping model for the gate insulator of insulated gate field-effect transistors
4. Evaluation of valence band top and electron affinity of SiO2and Si-based semiconductors using X-ray photoelectron spectroscopy
5. Optically induced injection of hot electrons into SiO2
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1. Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications;Solid State Phenomena;2024-08-27
2. Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current;IEEE Transactions on Power Electronics;2024-08
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