Evaluation of valence band top and electron affinity of SiO2and Si-based semiconductors using X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Evaluation of valence band top and electron affinity of SiO2and Si-based semiconductors using X-ray photoelectron spectroscopy

Published:2016-07-12 Issue:8S2 Volume:55 Page:08PC06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujimura Nobuyuki,Ohta Akio,Makihara Katsunori,Miyazaki Seiichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=8S2/a=08PC06/pdf

Reference28 articles.

1. Hafnium and zirconium silicates for advanced gate dielectrics

2. Analysis of Tunnel Current through Ultrathin Gate Oxides

3. Physics of Metal/High-k Interfaces

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