Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions
Author:
Affiliation:
1. Dipartimento di Ingegneria "Enzo Ferrari",Modena,MO,Italy,41125
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764602.pdf?arnumber=9764602
Reference21 articles.
1. Switching dynamics of ferroelectric HfO2-ZrO2 with various ZrO2 contents
2. Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition
3. Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications
4. Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions;sulzbach;Adv Electron Mater,2020
5. Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel Junctions
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1. Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by Means of Impedance Spectroscopy;IEEE Transactions on Device and Materials Reliability;2023-09
2. The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
3. Impedance Spectroscopy of Ferroelectric Capacitors and Ferroelectric Tunnel Junctions;2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09
4. Impedance Investigation of MIFM Ferroelectric Tunnel Junction Using a Comprehensive Small-Signal Model;IEEE Transactions on Device and Materials Reliability;2022-09
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