Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon
Author:
Affiliation:
1. KU Leuven,Dept. Materials Science,Leuven,Belgium,3001
2. IMEC,Leuven,Belgium,3001
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764597.pdf?arnumber=9764597
Reference31 articles.
1. Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- $\mu \text{m}$ DBR Laser Diodes
2. Accelerated aging for AlGaInP visible laser diodes
3. Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si
4. Optical pumped InGaAs/GaAs nano-ridge laser epitaxially grown on a standard 300-mm Si wafer
5. Loss-coupled DFB nano-ridge laser monolithically grown on a standard 300-mm Si wafer
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