Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si-Reference-Cited by-同舟云学术

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Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

Published:2018-04-09 Issue:15 Volume:112 Page:153507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jung Daehwan¹,Herrick Robert²,Norman Justin³,Turnlund Katherine¹^ORCID,Jan Catherine²,Feng Kaiyin⁴^ORCID,Gossard Arthur C.¹³⁴,Bowers John E.¹³⁴

Affiliation:

1. Institute for Energy Efficiency, University of California, Santa Barbara, California 93106, USA

2. Intel Corporation, Santa Clara, California 95054, USA

3. Materials Department, University of California, Santa Barbara, California 93106, USA

4. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

Funder

Advanced Research Projects Agency - Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5026147

Reference25 articles.

1. AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

2. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

3. Analysis of strained‐layer superlattice effects on dislocation density reduction in GaAs on Si substrates

4. Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

5. Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates

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3. High-temperature and continuous wave-operation of all-MOCVD grown InAs/GaAs quantum dot laser diodes with highly strained layer and low temperature p-AlGaAs cladding layer;Journal of Alloys and Compounds;2024-05

4. Modeling Dark Current Degradation of Monolithic InGaAs/GaAs-On-Si Nano-Ridge Photodetectors;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

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