Optical pumped InGaAs/GaAs nano-ridge laser epitaxially grown on a standard 300-mm Si wafer-Reference-Cited by-同舟云学术

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Optical pumped InGaAs/GaAs nano-ridge laser epitaxially grown on a standard 300-mm Si wafer

Published:2017-11-29 Issue:12 Volume:4 Page:1468
ISSN:2334-2536
Container-title:Optica
language:en
Short-container-title:Optica

Author:

Shi Yuting,Wang Zhechao,Van Campenhout Joris,Pantouvaki Marianna,Guo Weiming,Kunert Bernardette,Van Thourhout Dries

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Net continuous wave optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering

2. Ge-on-Si laser operating at room temperature

3. The impact of donors on recombination mechanisms in heavily doped Ge/Si layers

4. Lasing in direct-bandgap GeSn alloy grown on Si

5. III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

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1. GaAs Microdisk Lasers with Al₂O₃ Passivation Selectively Grown on SOI;ACS Photonics;2024-08-21

2. InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer;Optics Letters;2024-08-15

3. Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer;Journal of Physics D: Applied Physics;2024-07-26

4. I/O-efficient iterative matrix inversion with photonic integrated circuits;Nature Communications;2024-07-15

5. Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon;Journal of Physics D: Applied Physics;2024-02-29

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