The impact of donors on recombination mechanisms in heavily doped Ge/Si layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4986236
Reference38 articles.
1. Group IV Direct Band Gap Photonics: Methods, Challenges, and Opportunities
2. Recent advances in germanium emission [Invited]
3. Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications
4. Studies on the recombination of electrons and holes in germanium
5. Electron-hole recombination in cobalt-doped p-type germanium
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High Doping Activation (≥1020 cm–3) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing;ACS Applied Electronic Materials;2024-06-03
2. Enhancing the photoluminescence response of thick Ge-on-Si layers using photonic crystals;Journal of Physics D: Applied Physics;2021-11-12
3. Formation and Optical Properties of Locally Strained Ge Microstructures Embedded into Cavities;Semiconductors;2021-06
4. n-type Ge/Si antennas for THz sensing;Optics Express;2021-02-25
5. Light Emission from Germanium Nanostructures;Topics in Applied Physics;2021
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3