Accurate screening of defective oxide on SiC using consecutive multiple threshold-voltage measurements
Author:
Affiliation:
1. Hitachi, Ltd.,Center for Technology Innovation – Electrification,Tokyo,Japan,185-8601
2. Hitachi Power Semiconductor Device, Ltd.,Ibaraki,Japan,319-1221
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764583.pdf?arnumber=9764583
Reference18 articles.
1. Oxide Breakdown Reliability of SiC MOSFET
2. Evaluation of gate oxide reliability in 3.3 kV 4H-SiC DMOSFET with J-Ramp TDDB methods
3. The Road to a Robust and Affordable SiC Power MOSFET Technology
4. Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs
5. A straightforward electrical method to determine screening capability of GOX extrinsics in arbitrary, commercially available SiC MOSFETs
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