Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure-Reference-Cited by-同舟云学术

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Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure

Published:2017-03 Issue:3 Volume:32 Page:2189-2202
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Cucak Dejana,Vasic Miroslav,Garcia Oscar,Angel Oliver Jesus,Alou Pedro,Antonio Cobos Jose,Wang Ashu,Martin-Horcajo Sara,Romero Maria Fatima,Calle Fernando

Funder

Ministry of Science and Education of Spain

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/7779205/07470463.pdf?arnumber=7470463

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Terminal charges and capacitances;GaN Transistor Modeling for RF and Power Electronics;2024

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