Analysis and Design of Class-E Amplifier with Nonlinear Output Capacitance Model Using Sigmoid Function for GaN HEMT-Reference-Cited by-同舟云学术

Analysis and Design of Class-E Amplifier with Nonlinear Output Capacitance Model Using Sigmoid Function for GaN HEMT

Published:2024-07-01 Issue:4 Volume:13 Page:437-444
ISSN:2187-1094
Container-title:IEEJ Journal of Industry Applications
language:en
Short-container-title:IEEJ Journal IA

Author:

Seki Shota¹,Funaki Tsuyoshi¹

Affiliation:

1. Graduate School of Engineering., Osaka University

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Link

https://www.jstage.jst.go.jp/article/ieejjia/13/4/13_23013822/_pdf

Reference33 articles.

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3. (3) E. Chung and J.-I. Ha: “Impedance Matching Network Design for 6.78MHz Wireless Power Transfer System With Constant Power Characteristics Against Misalignment”, IEEE Transactions on Power Electronics, Vol. 39, No. 1, pp. 1788-1801 (2024)

4. (4) G. E. Naldini, et al.: “Radio Frequency Tube Welder PVC Medical Applications”, IEEE Latin America Transactions, Vol. 14, No. 6, pp. 2700-2705 (2016)

5. (5) A. Clements, V. Vishnoi, S. Dehghani, and T. Johnson: “A Comparison of GaN Class E Inverter and Synchronous Rectifier Designs for 13.56MHz, 27.12MHz and 40.68MHz ISM Bands”, Proc. IEEE Wireless Power Transfer Conference, pp. 1-4, Montreal, QC, Canada (2018)