Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation-Reference-Cited by-同舟云学术

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Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation

Published:2015-05 Issue:5 Volume:30 Page:2445-2455
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Nguyen Thanh-That,Ahmed Ashraf,Thang T. V.,Park Joung-Hu

Funder

Human Resources Development

Korea Institute of Energy Technology Evaluation and Planning

Korea Government Ministry of Knowledge Economy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/6996060/06888511.pdf?arnumber=6888511

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2. A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability;IEEE Transactions on Device and Materials Reliability;2023-12

3. Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events;IEEE Transactions on Device and Materials Reliability;2023-12

4. Investigation of Short-Circuit Failure Mechanism in 1.2kV SiC MOSFET;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10

5. A Design Model of Soft Turn-off Protection for SiC MOSFETs;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

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