A high speed subthreshold SRAM cell design
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/5190881/5206227/05206306.pdf?arnumber=5206306
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A comparative study of image feature detection and description methods for robot vision;Optics and Photonics for Information Processing XIII;2019-09-06
2. FinFET 4T‐SRAM operable at near‐threshold region;Electronics and Communications in Japan;2019-02-12
3. FinFET 4T-SRAM Operable at Near-Threshold Region;IEEJ Transactions on Electronics, Information and Systems;2019-01-01
4. A novel 9T SRAM architecture for low leakage and high performance;Analog Integrated Circuits and Signal Processing;2017-05-30
5. A Near-Threshold Soft Error Resilient 7T SRAM Cell with Low Read Time for 20 nm FinFET Technology;Journal of Electronic Testing;2017-05-22
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