A Near-Threshold Soft Error Resilient 7T SRAM Cell with Low Read Time for 20 nm FinFET Technology
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Link
http://link.springer.com/article/10.1007/s10836-017-5659-8/fulltext.html
Reference39 articles.
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3. Ansari M, Afzali-Kusha H, Ebrahimi B, Navabia Z, Afzali-Kusha A (2015) A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies. Elsevier Journal of Integration the VLSI Journal 50:91–106. doi: 10.1016/j.vlsi.2015.02.002
4. Baumann R (2005) Radiation-induced soft errors in advanced semiconductor technologies. IEEE Trans Device Mater Reliab 5(3):305–316. doi: 10.1109/TDMR.2005.853449
5. Bosio A, Dilillo L, Girard P, Pravossoudovitch S, Virazel A (2009) Advanced test methods for SRAMs: effective solutions for dynamic fault detection in Nanoscaled technologies, 1st edn. Springer, New York doi: 10.1007/978-1-4419-0938-1
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