Hole Virtual Gate Model Explaining Surface-Related Dynamic R<sub>ON</sub> in p-GaN Power HEMTs-Reference-Cited by-同舟云学术

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Hole Virtual Gate Model Explaining Surface-Related Dynamic R_ON in p-GaN Power HEMTs

Published:2024-05 Issue:5 Volume:45 Page:801-804
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zagni Nicolò¹^ORCID,Verzellesi Giovanni²^ORCID,Bertacchini Alessandro²^ORCID,Borgarino Mattia¹^ORCID,Iucolano Ferdinando³,Chini Alessandro¹^ORCID

Affiliation:

1. Department of Engineering “Enzo Ferrari,”, Università di Modena e Reggio Emilia, Modena, Italy

2. Department of Sciences and Methods for Engineering (DISMI), EN&TECH Center, University of Modena and Reggio Emilia, Reggio Emilia, Italy

3. STMicroelectronics, Catania, Italy

Funder

European Project Gallium Nitride for Advanced Power Applications

Electronic Component Systems for European Leadership Joint Undertaking

European Union’s Horizon 2020 research and innovation programme, and Italy, Germany, France, Poland, Czech Republic, Netherlands

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10509537/10466553.pdf?arnumber=10466553

Reference20 articles.

1. GaN-based power devices: Physics, reliability, and perspectives

2. Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

3. Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications

4. “Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs

5. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs;IEEE Transactions on Power Electronics;2024-11

2. A Review of Degradation in GaN Based HEMTs;2024 9th International Conference on Electronic Technology and Information Science (ICETIS);2024-05-17

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