6C-3 Field-Effect-Modulated SAW Devices on AlGaN/GaN Heterostructures-Reference-Cited by-同舟云学术

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6C-3 Field-Effect-Modulated SAW Devices on AlGaN/GaN Heterostructures

Published:2006 Issue: Volume: Page:
ISSN:
Container-title:2006 IEEE Ultrasonics Symposium
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Author:

Pedros J.,Cuerdo R.,Calle F.,Grajal J.,Martinez-Chacon J. L.,Bougrioua Z.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4151855/4151856/04151934.pdf?arnumber=4151934

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas;Applied Physics Express;2012-05-29

2. GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection;2011 Joint Conference of the IEEE International Frequency Control and the European Frequency and Time Forum (FCS) Proceedings;2011-05

3. Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN;Applied Physics Letters;2010-03-22

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