Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas-Reference-Cited by-同舟云学术

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Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas

Published:2012-05-29 Issue:6 Volume:5 Page:067201
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Amar Achraf Ben,Faucher Marc,Grimbert Bertrand,Cordier Yvon,François Marc,Tilmant Pascal,Werquin Matthieu,Zhang Victor,Ducatteau Damien,Gaquière Christophe,Buchaillot Lionel,Théron Didier

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=6/a=067201/pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A micro-electro-mechanical accelerometer based on gallium nitride on silicon;Applied Physics Letters;2023-01-16

2. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching;Applied Physics Express;2021-02-24

3. InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments;Sensors and Actuators A: Physical;2017-08

4. Improved analytical modelling and finite element verification of stressed GaN microbeam resonators by piezoelectric actuation;Journal of Micromechanics and Microengineering;2017-07-21

5. Gallium nitride MEMS resonators: how residual stress impacts design and performances;Microsystem Technologies;2017-01-27

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