Improved Specific Contact Resistivity in Amorphous IGZO Transistors Using an ALD-Derived Al-Doped ZnO Interlayer-Reference-Cited by-同舟云学术

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Improved Specific Contact Resistivity in Amorphous IGZO Transistors Using an ALD-Derived Al-Doped ZnO Interlayer

Published:2024-05 Issue:5 Volume:45 Page:849-852
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jeong Joo Hee¹,Yoon Seong Hun¹,Lee Seung Hee²,Kuh Bong Jin²,Kim Taikyu³,Jeong Jae Kyeong¹^ORCID

Affiliation:

1. Department of Electronic Engineering, Hanyang University, Seoul, Republic of Korea

2. Samsung Electronics Company, Hwaseong-si, Gyeonggi-do, Republic of Korea

3. Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea

Funder

National Research Foundation

Korean Government

Samsung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10509537/10478602.pdf?arnumber=10478602

Reference28 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips

3. Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors

4. Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer

5. High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition

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