Irradiation Hardened <i>p</i>-GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV⋅cm<sup>2</sup>/mg and 95% Conversion Efficiency at 300 W/500 kHz-Reference-Cited by-同舟云学术

Irradiation Hardened p-GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV⋅cm²/mg and 95% Conversion Efficiency at 300 W/500 kHz

Published:2024-06 Issue:6 Volume:45 Page:976-979
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhou Feng¹^ORCID,Zou Can¹,Zhou Tianyang¹,Xu Weizong¹^ORCID,Ren Fangfang¹^ORCID,Zhou Dong¹^ORCID,Wang Yiwang¹,Chen Dunjun¹^ORCID,Xia Yuanyang²^ORCID,Wu Leke²^ORCID,Li Yiheng²,Zhu Tinggang²,Zheng Youdou¹,Zhang Rong¹^ORCID,Lu Hai¹^ORCID

Affiliation:

1. School of Electronic Science and Engineering, Nanjing University, Nanjing, China

2. CorEnergy Semiconductor Company Ltd., Suzhou, China

Funder

National Key Research and Development Program of China

Jiangsu Provincial Key Research and Development Programme

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10538033/10495339.pdf?arnumber=10495339

Reference31 articles.

1. Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics

2. Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs

3. Dose-Rate Dependence of the Total-Ionizing-Dose Response of GaN-Based HEMTs

4. A Comparison of Single-Event Transients in Pristine and Irradiated ${{\rm Al}_{0.3}}{{\rm Ga}_{0.7}}{{\rm N}/{\rm GaN}}$ HEMTs using Two-Photon Absorption and Heavy Ions

5. Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

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