Author:
Guerrieri Simona Donati,Bonani Fabrizio,Ghione Giovanni
Cited by
11 articles.
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1. Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07
2. Multibias TCAD Analysis of Trap Dynamics in GaN HEMTs;Lecture Notes in Electrical Engineering;2023-11-29
3. Synergic Exploitation of TCAD and Deep Neural Networks for Nonlinear FinFET Modeling;IEEE EUROCON 2023 - 20th International Conference on Smart Technologies;2023-07-06
4. Performance Prediction of Power Amplifiers for the Extended Bandwidth via Neural Networks;2023 31st Signal Processing and Communications Applications Conference (SIU);2023-07-05
5. Modeling of HEMT Devices Through Neural Networks: Headway for Future Remedies;2023 10th International Conference on Electrical and Electronics Engineering (ICEEE);2023-05-08