Improving the drive current of AlGaN/GaN HEMT using external strain engineering
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8718786/8731017/08731108.pdf?arnumber=8731108
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of Different Innovative Gate Field Plate Structures of AlGaN/GaN HEMT;Studies in Autonomic, Data-driven and Industrial Computing;2024
2. Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization;Semiconductor Science and Technology;2023-09-01
3. An insight to current collapse in GaN HEMT and suppressing techniques;Engineering Research Express;2023-01-17
4. Effect of Nitride Stress on Linearity performance of AlGaN/GaN HEMT;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26
5. Breakdown Voltage Improvement in AlGaN/GaN HEMT by Introducing a Field Plate;Algorithms for Intelligent Systems;2022
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