Analysis of Different Innovative Gate Field Plate Structures of AlGaN/GaN HEMT
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-5435-3_31
Reference14 articles.
1. Mishra UK, Parikh P, Wu Y-F (2002) AlGaN/GaN HEMTs-an overview of device operation and applications. Proc IEEE 90(6):1022–1031. https://doi.org/10.1109/JPROC.2002.1021567
2. Chander S, Gupta S, Ajay, Gupta M (2018) Enhancement of breakdown voltage in AlGaN/GaN HEMT using passivation technique for microwave application. Superlattices Microstruct 120:217–222, ISSN 0749-6036. https://doi.org/10.1016/j.spmi.2018.05.039
3. Cheng W, Lei S, Li W, Zhao F, Chan M, Yu H (2019) Improving the drive current of AlGaN/GaN HEMT using external strain engineering. In: 2019 Electron devices technology and manufacturing conference (EDTM), Singapore, Singapore, pp 374–376. https://doi.org/10.1109/EDTM.2019.8731108
4. Trew RJ, Mishra UK (1991) Gate breakdown in MESFET’s and HEMT’s. IEEE Electron Dev Lett 12:524–526
5. Karmalkar S, Mishra UK (2001) Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate. IEEE Trans Electron Devices 48(8):1515–1521
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