On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs

Published:2024-04-14 Issue: Volume: Page:1-5
ISSN:
Container-title:2024 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Mir Mehak A.¹,Thakare A.¹,Munshi M. A.¹,Avinash V.¹,Wani S.¹,Khan Z.¹,Chaudhuri R.¹,Karthik S.¹,Malik R.¹,Joshi V.¹,Shrivastava M.¹

Affiliation:

1. Indian Institute of Science,Department of Electronic Systems Engineering,Bangalore,India

Funder

Indian Institute of Science

Department of Science and Technology

Science and Engineering Research Board

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529406.pdf?arnumber=10529406

Reference17 articles.

1. Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs

2. Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs

3. “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

4. Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs

5. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

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