An AlGaAs/In/sub x/Ga/sub 1-x/As/AlGaAs (0>or=x>or=0.5) pseudomorphic HEMT on GaAs substrate using an In/sub x/2/Ga/sub 1-x/2/As buffer layer
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/3248/00106264.pdf?arnumber=106264
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A simple yet comprehensive unified physical model of the 2D electron gas in delta-doped and uniformly doped high electron mobility transistors;IEEE Transactions on Electron Devices;2000
2. A highly mismatched InxGa1−xAs/AlGaAs (0 ≦ x ≦ 0.5) pseudomorphic HEMT on GaAs substrate using an Inx/2Ga1−x/2As buffer layer;Solid-State Electronics;1997-10
3. Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures;Journal of Electronic Materials;1995-11
4. Degradation of InGaAs High Electron Mobility Transistors: The Role of Channel Composition and Thickness;MRS Proceedings;1995
5. Inx(AlzGa1-z)1-xAs as buffers for the growth of strain-relaxed InxGa1-xAs epilayers;Semiconductor Science and Technology;1993-03-01
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