A highly mismatched InxGa1−xAs/AlGaAs (0 ≦ x ≦ 0.5) pseudomorphic HEMT on GaAs substrate using an Inx/2Ga1−x/2As buffer layer-Reference-Cited by-同舟云学术

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A highly mismatched InxGa1−xAs/AlGaAs (0 ≦ x ≦ 0.5) pseudomorphic HEMT on GaAs substrate using an Inx/2Ga1−x/2As buffer layer

Published:1997-10 Issue:10 Volume:41 Page:1469-1474
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Mizutani Takashi,Maezawa K.,Nozaki Jun-Ichi,Arakawa Masashi,Kishimoto Shigeru

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

2. dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation‐doped field‐effect transistor

3. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates

4. Microwave performance of 0.4 μm gate metamorphic In0.29Al0.71As/In0.3Ga0.7As HEMT on GaAs substrate

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