Novel insb-based quantum well transistors for ultra-high speed, low power logic applications-Reference-Cited by-同舟云学术

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Novel insb-based quantum well transistors for ultra-high speed, low power logic applications

Published: Issue: Volume: Page:
ISSN:
Container-title:Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
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Author:

Ashley T.,Barnes A.R.,Buckle L.,Datta S.,Dean A.B.,Emeny M.T.,Fearn M.,Haves D.G.,HiIton K.P.,Jefferies R.,Martin T.,Nash K.J.,Phillips T.J.,Tang W.H.A.,Wilding P.J.,Chau R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9804/30918/01435293.pdf?arnumber=1435293

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monte Carlo calculations of the electron impact ionization in n-type InSb crystal;Semiconductor Science and Technology;2013-01-17

2. Ag-assisted CBE growth of ordered InSb nanowire arrays;Nanotechnology;2010-12-06

3. InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch;Nanotechnology;2009-11-11

4. Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performance;Semiconductor Science and Technology;2008-01-04

5. Plasmonically enhanced emission from a group-III nitride nanowire emitter;Nanotechnology;2007-06-05

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