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Plasmonically enhanced emission from a group-III nitride nanowire emitter

  • Published:2007-06-05 Issue:26 Volume:18 Page:265401
  • ISSN:0957-4484
  • Container-title:Nanotechnology
  • language:
  • Short-container-title:Nanotechnology

Author:

Mastro Michael A,Freitas Jaime A,Glembocki Orest,Eddy Charles R,Holm R T,Henry Rich L,Caldwell Josh,Rendell Ronald W,Kub Fritz,Kim J

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. All-epitaxial fabrication of a nanowire plasmon laser structure;physica status solidi (c);2014-02

2. Perspectives on future directions in III-N semiconductor research;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-09

3. Plasmonically enhanced emission from an inverted GaN light emitting diode;SPIE Proceedings;2011-09-08

4. Enhanced Conversion Efficiency of GaAs Solar Cells Using Ag Nanoparticles;Advanced Science Letters;2010-12-01

5. Polarization fields in III-nitride nanowire devices;Nanotechnology;2010-03-11
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