Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs
Author:
Affiliation:
1. Institute for Microelectronics, Technische Universität Wien,Wien,Austria,1040
2. Infineon Technologies AG,Neubiberg,Germany,85579
3. Infineon Technologies Austria AG,Villach,Austria,9500
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117740.pdf?arnumber=10117740
Reference46 articles.
1. Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation
2. The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters
3. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability
4. Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs
5. Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress
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1. Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs;Physical Review Applied;2024-08-30
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3. Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling;IEEE Transactions on Electron Devices;2024-07
4. Gate Switching Instability in Silicon Carbide MOSFETs—Part I: Experimental;IEEE Transactions on Electron Devices;2024-07
5. A Physics-Oriented Analysis of SiC Trench MOSFETs Under Gate Switching Stress Test Conditions;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
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