Decomposition of Vertical and Lateral Charge Loss in Long-term Retention of 3-D NAND Flash Memory-Reference-Cited by-同舟云学术

Decomposition of Vertical and Lateral Charge Loss in Long-term Retention of 3-D NAND Flash Memory

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Park Jounghun¹,Yoon Gilsang¹,Go Donghyun¹,Kim Donghwi¹,An Ukju¹,Kim Jongwoo¹,Kim Jungsik²,Lee Jeong-Soo¹

Affiliation:

1. Pohang University of Science and Technology,Department of Electrical Engineering,Pohang,South Korea,37673

2. Gyeongsang National University,Department of Electrical Engineering,Jinju,South Korea,52828

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117868.pdf?arnumber=10117868

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3. Statistical characterization of trap position, energy, amplitude and time constants by RTN measurement of multiple individual traps;nagumo;IEDM Tech Dig,2020

4. 3D TCAD Model for Poly-Si Channel Current and Variability in Vertical NAND Flash Memory

5. Analysis and Compact Modeling of Fast Detrapping From Bandgap-Engineered Tunneling Oxide in 3-D NAND Flash Memories

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