A review of recent MOSFET source and drain resistances extraction methods using a single test device-Reference-Cited by-同舟云学术

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A review of recent MOSFET source and drain resistances extraction methods using a single test device

Published:2021-04-08 Issue: Volume: Page:
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Container-title:2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Ortiz-Conde Adelmo,Quevedo-Lopez Manuel A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9420829/9420830/09420846.pdf?arnumber=9420846

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficient RF Small-Signal Parasitic Parameters Extraction Technique For The Advanced MOSFETs;2023 2nd International Conference on Electronics, Energy and Measurement (IC2EM);2023-11-28

2. Simultaneous Extraction of Mobility Enhancement Factor and Threshold Voltage With Parasitic Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors;IEEE Transactions on Electron Devices;2023-05

3. Extraction of bias dependent access resistances of advanced MOSFETs;2022 2nd International Conference on Advanced Electrical Engineering (ICAEE);2022-10-29

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