Modeling and Simulation of Vertical Organic Permeable Base Transistors-Reference-Cited by-同舟云学术

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Modeling and Simulation of Vertical Organic Permeable Base Transistors

Published:2024-05-08 Issue: Volume:7 Page:1-4
ISSN:
Container-title:2024 IEEE Latin American Electron Devices Conference (LAEDC)
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Author:

Darbandy Ghader¹,Pashaki Elahe Rastegar¹,Iniguez Benjamin²,Kleemann Hans³,Kloes Alexander¹

Affiliation:

1. University of Applied Sciences,NanoP, TH Mittelhessen,Giessen,Germany,35390

2. Universitat Rovira i Virgili,Department of Electronic Engineering,Tarragona,Spain,43007

3. Technische Universität Dresden,Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics,Dresden,Germany,01062

Funder

PATH

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10555569/10555588/10555645.pdf?arnumber=10555645

Reference16 articles.

1. A Review of Vertical Organic Transistors

2. Vertical organic transistors with a permeable base: from fundamentals to performance prediction

3. Unraveling Structure and Device Operation of Organic Permeable Base Transistors

4. Advanced Organic Permeable-Base Transistor with Superior Performance

5. Scaling of high-performance organic permeable base transistors;Al-Shadeedi,2018

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