Vertical organic transistors with a permeable base: from fundamentals to performance prediction-Reference-Cited by-同舟云学术

Vertical organic transistors with a permeable base: from fundamentals to performance prediction

Published:2023 Issue:16 Volume:11 Page:5422-5430
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lee Hyuna¹,Lim Kyung-Geun²^ORCID,Kim Chang-Hyun¹^ORCID

Affiliation:

1. School of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea

2. Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea

Abstract

A combined experimental and theoretical investigation establishes rational design rules for high-performance vertical organic permeable-base transistors (OPBTs).

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00299C

Reference48 articles.

1. Realization of Molecular‐Based Transistors

2. Vertical Organic Field‐Effect Transistors

3. Vertical β-Ga₂O₃ Power Transistors: A Review

4. A Review of Vertical Organic Transistors

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