Affiliation:
1. Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany
Funder
German Federal Ministry of Defence (BMVg), Bundeswehr Technical Center for Information Technology and Electronics
Federal Office of Bundeswehr Equipment, Information Technology and In-Service Support (BAAINBw) within the project SysGaN
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Cited by
19 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. $W$-Band GaN T/R Single Chip With 1-W Output Power and 6.4-dB Noise Figure for AESA Applications;IEEE Transactions on Microwave Theory and Techniques;2024
2. Design analysis of advanced power amplifiers for 5G wireless applications: a survey;Analog Integrated Circuits and Signal Processing;2023-11-15
3. A GaN HEMT Based MMIC Power Amplifier Covering 75–130 GHz;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13
4. 2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%;IEEE Microwave and Wireless Technology Letters;2023-06
5. $V$- and $W$-Band Millimeter-Wave GaN MMICs;IEEE Journal of Microwaves;2023-01