A GaN HEMT Based MMIC Power Amplifier Covering 75–130 GHz-Reference-Cited by-同舟云学术

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A GaN HEMT Based MMIC Power Amplifier Covering 75–130 GHz

Published:2023-11-13 Issue: Volume: Page:1-3
ISSN:
Container-title:2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
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Author:

Ge Qin¹,Dou Bingfei²,Liu Jing²,Yao Xiaojiang³

Affiliation:

1. Industry and Information Technology Bureau of Shenzhen Municipality,Shenzhen,China,518034

2. Hefei Science of China Microelectronics Innovation Center Co., Ltd,Hefei,China,230000

3. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210000

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10380804/10380975/10381029.pdf?arnumber=10381029

Reference11 articles.

1. New design method of the single stage distributed amplifier

2. Bandwidth enhancement technique for bipolar single stage distributed amplifier design

3. AlGaN/GaN HEMT With 300-GHz $f_{\max}$

4. 360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

5. W-Band MMIC PA With Ultrahigh Power Density in 100-nm AlGaN/GaN Technology

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