登录 注册 会员服务 联系我们

Compact Modeling of Drain Current Thermal Noise in FDSOI MOSFETs Including Back-Bias Effect

  • Published:2017-07 Issue:7 Volume:65 Page:2261-2270
  • ISSN:0018-9480
  • Container-title:IEEE Transactions on Microwave Theory and Techniques
  • language:
  • Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Sahu Yogendra,Kushwaha PragyaORCID,Dasgupta Avirup,Hu Chenming,Chauhan Yogesh Singh

Funder

Semiconductor Research Corporation

DST Fast Track Scheme for Young Scientist

Science and Engineering Research Board

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxide and ferro layer thickness optimization of negative capacitance junctionless VSTB FET to improve electrical and thermal noise performance;Materials Science and Engineering: B;2024-11

2. A Combined Analytical and Simulation-Based Methodology for Quantifying the Noise-Power-Area Trade-Offs in Biomedical Amplifiers;IEEE Transactions on Circuits and Systems I: Regular Papers;2024

3. Induced Back-Gate Noise in FDSOI MOSFET;IEEE Transactions on Circuits and Systems II: Express Briefs;2023

4. Impact of Back Gate Bias on Analog Performance of Dopingless Transistor;Transactions on Electrical and Electronic Materials;2022-12-08

5. A Wideband Balun-LNA for Sub-6-GHz 5G NR with Multi-Mode Operation in 22-nm FD-SOI;2022 20th IEEE Interregional NEWCAS Conference (NEWCAS);2022-06-19
同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3