A 28-GHz Harmonic-Tuned Power Amplifier in 130-nm SiGe BiCMOS-Reference-Cited by-同舟云学术

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A 28-GHz Harmonic-Tuned Power Amplifier in 130-nm SiGe BiCMOS

Published:2017-02 Issue:2 Volume:65 Page:522-535
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Sarkar Anirban^ORCID,Floyd Brian A.

Funder

Samsung

Semiconductor Research Corporation Texas Analog Center of Excellence

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/7847453/07803568.pdf?arnumber=7803568

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimizing D2D Communication With Practical STAR-RIS and Irregular Configurations;IEEE Open Journal of Vehicular Technology;2024

2. Design and Optimization of BiCMOS SiGe PA for Millimeter-Wave Applications;2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2023-12-11

3. A Wideband Balanced Amplifier Using Edge-Coupled Quadrature Couplers in 0.13-μm SiGe HBT Technology;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-02

4. A 24-30 GHz Balanced PA With High Linearity for mm-Wave 5G in 130 nm SiGe BiCMOS;2022 IEEE MTT-S International Wireless Symposium (IWS);2022-08-12

5. A 24-30GHz Wideband Power Amplifier With High-Coupling-Coefficient Transmission Line Transformer and Staggered Tuning;2022 14th Global Symposium on Millimeter-Waves & Terahertz (GSMM);2022-05-18

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