A 24-30 GHz Balanced PA With High Linearity for mm-Wave 5G in 130 nm SiGe BiCMOS-Reference-Cited by-同舟云学术

A 24-30 GHz Balanced PA With High Linearity for mm-Wave 5G in 130 nm SiGe BiCMOS

Published:2022-08-12 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE MTT-S International Wireless Symposium (IWS)
language:
Short-container-title:

Author:

Li Zekun¹,Chen Jixin¹,Hou Debin²,Wang Long¹,Xiang Yu¹

Affiliation:

1. School of Information Science and Engineering, Southeast University,State Key Lab. of Millimeter Waves,Nanjing,China,210096

2. MISIC Microelectronics,Nanjing,China,211111

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9977438/9977447/09977973.pdf?arnumber=9977973

Reference6 articles.

1. A 28-GHz Harmonic-Tuned Power Amplifier in 130-nm SiGe BiCMOS

2. A 32 GHz 20 dBm-PSAT transformerbased Doherty power amplifier for multi-Gb/s 5G applications in 28 nm bulk CMOS;indirayanti;Proc IEEE Radio Freq Integr Circuits Symp (RFIC),0

3. Investigation of active load pulling effect on radiated power of the antenna elements in a finite phased array transmitter for satellite communication

4. A 25–35 GHz Neutralized Continuous Class-F CMOS Power Amplifier for 5G Mobile Communications Achieving 26% Modulation PAE at 1.5 Gb/s and 46.4% Peak PAE

5. A 24–30-GHz TRX Front-End With High Linearity and Load-Variation Insensitivity for mm-Wave 5G in 0.13-μm SiGe BiCMOS

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Optimization of BiCMOS SiGe PA for Millimeter-Wave Applications;2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2023-12-11

2. A 55-85 GHz Power Amplifier with 15.8 dBm P_sat and 27.5% PAE in 130nm SiGe BiCMOS;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14