Single and Power-Combined Linear E-Band Power Amplifiers in 0.12-$\mu$ m SiGe With 19-dBm Average Power 1-GBaud 64-QAM Modulated Waveforms
Author:
Funder
Analog Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/8681220/08632966.pdf?arnumber=8632966
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Systematic Design Methodology for CMOS Millimeter-Wave Power Amplifiers With an E-Band Fully Differential Implementation in 16-nm FinFET;IEEE Transactions on Microwave Theory and Techniques;2024-08
2. A Linear High-Efficiency Distributed Power Amplifier Utilizing Class-AB and Inverse-Class-C Complementary Structure;IEEE Transactions on Circuits and Systems I: Regular Papers;2024
3. A 77 GHz Power Amplifier with 19.1 dBm Peak Output Power in 130 nm SiGe Process;Micromachines;2023-12-14
4. A Compact E-Band Load-Modulation Balanced Power Amplifier Using Coupled Transmission-Line Output Network Achieving 22.1-dBm Psat and 34.9%/12.2% Efficiency at Psat/6-dB PBO;2023 IEEE Asian Solid-State Circuits Conference (A-SSCC);2023-11-05
5. A 68-85GHz Current-Combining Power Amplifier with 20% PAE and 17dBm Psat in 40-nm CMOS;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21
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