Affiliation:
1. State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University, Nanjing 210096, China
Abstract
This article reports a two-stage differential structure power amplifier based on a 130 nm SiGe process operating at 77 GHz. By introducing a tunable capacitor for amplitude and phase balance at the center tap of the secondary coil of the traditional Marchand balun, the balun achieves amplitude imbalance less than 0.5 dB and phase imbalance less than 1 degree within the operating frequency range of 70–85 GHz, which enables the power amplifier to exhibit comparable output power over a wide operating frequency band. The power amplifier, based on a designed 3-bit digital analog convertor (DAC)-controlled base bias current source, exhibits small signal gain fluctuation of less than 5 dB and saturation output power fluctuation of less than 2 dB near the 80 GHz frequency point when the ambient temperature varies in the range of −40 °C to 125 °C. Benefiting from the aforementioned design, the tested single-path differential power amplifier exhibits a small signal gain exceeding 16 dB, a saturation output power exceeding 18 dBm, and a peak saturation output power of 19.1 dBm in the frequency band of 70–85 GHz.
Funder
Natural Science Foundation of Jiangsu Province
National Natural Science Foundation of China
China Postdoctoral Science Foundation
State Key Laboratory of Mobile Network and Mobile Multimedia Technique, ZTE Corporation
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Reference22 articles.
1. A 76–81 GHz 2 × 8 MIMO Radar Transceiver with Broadband Fast Chirp Generation and 16-Antenna-in-Package Virtual Array;Duan;IEEE J. Solid-State Circuits,2023
2. A 76- to 81-GHz Multi-Channel Radar Transceiver;Fujibayashi;IEEE J. Solid-State Circuits,2017
3. Barabi, A., Ross, N., Wolfman, A., Shaham, O., and Socher, E. (2018, January 10–15). A +27 dBm Psat 27 dB Gain W-Band Power Amplifier in 0.1 μm GaAs. Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium-IMS, Philadelphia, PA, USA.
4. Zhou, P., Chen, J., Hong, W., and Gao, H. (2021, January 23–26). A 77-GHz Fully Integrated Power Amplifier for Automotive Radar Application in 40-nm CMOS. Proceedings of the 2021 IEEE MTT-S International Wireless Symposium (IWS), Nanjing, China.
5. Çelik, U., and Reynaert, P. (2019, January 2–4). An E-band compact power amplifier for future array-based backhaul networks in 22 nm FD-SOI. Proceedings of the 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Boston, MA, USA.